Quality Policy The goal of Hemlock Semiconductor Corporation is to be the leader in high-quality and reliably supplied polycrystalline silicon and related chemicals that provide the best value for our customers and contribute to our mutual success. We will accomplish this by providing products and services that meet the expectations of our customers today and tomorrow through our total commitment to continuous improvement in everything we do. ISO 9001 Registration A major part of our commitment to HSC customers is to have the necessary quality systems in place to help achieve our Quality Policy as stated above. HSC achieved registration to the ISO 9002 Quality Management System Requirements in March 1992. In January 2002, HSC achieved a registration certificate upgrade to the ISO 9001:2000 Revised Standard. The ISO Quality Management System Requirement Standard is recognized as a global quality standard and is an important part of the way we do our everyday business at HSC.
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Semiconductor-grade polycrystalline silicon and silicon source chemicals undergo extensive quality control. With state-of-the-art evaluation technology and scientific expertise, Hemlock Semiconductor Corporation certifies and reports the absolute purity of each lot of semiconductor-grade polycrystalline silicon. Hemlock Semiconductor Corporation is a leader in the development of standardized evaluation procedures for measuring silicon purity. As semiconductor industry requirements become more demanding, the need for the highest-purity polycrystalline silicon and silicon source chemicals will increase. Hemlock Semiconductor Corporation is committed to staying on the leading edge of technology that is necessary to meet these requirements. Polycrystalline silicon Each lot of polycrystalline silicon is sampled for analysis of electrically active impurities. Actual impurity levels are reported for each process lot. A silicon sample is float zoned for measurement of electrical resistively and conductivity type. The resulting single-crystal sample is analyzed by cryogenic photoluminescence to determine elemental born and to confirm total donor. The photoluminescence method is one of the most sensitive in detecting trace amounts of impurities. Hemlock Semiconductor Corporation pioneered the routine use of photoluminescence for silicon analysis.
Carbon impurities are determined using Fourier transform
infrared spectroscopy. Impurity levels are reported on an audit basis.
To make polycrystalline silicon into a finished product, additional processing steps are required. Under contamination-free conditions, polycrystalline silicon rods from the decomposition process are broken into finished chunks for Czochralski applications. |
Quality products With a history of accomplishment, Hemlock Semiconductor Corporation is committed to providing the products and services required by customers. Purity is the first priority in the production of polycrystalline silicon. Experienced employees utilize advanced process technology and modern equipment to produce high-purity products that meet customer requirements. To guarantee superior product quality and consistency,
Hemlock Semiconductor Corporation uses statistical process control (SPC) techniques to
control manufacturing processes for polycrystalline silicon and silicon source chemicals. Silicon source chemicals To ensure the highest purity polycrystalline silicon and silicon source chemicals, trichlorosilane and intermediate silicon source chemicals are continuously analyzed by gas liquid chromatography and infrared spectroscopy for composition and trace elements. Electrically active impurities are tested on samples produced by deposition of an epitaxial single-crystal silicon layer.
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